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[Analysis Case] Stress Evaluation of Ferroelectric Capacitor Metal Using Finite Element Method

It is possible to quantify the stress distribution between different materials during heating and cooling.

FeFETs (ferroelectric transistors) using HfxZr1-xO2 (HZO) are expected to be candidates for next-generation transistors due to their high-speed operation and low power consumption, but they have the drawback of low polarization. To improve the characteristics of FeFETs, enhancing the ferroelectricity of HZO is effective, and methods have been proposed to apply stress to the HZO layer to increase the crystalline phases that exhibit ferroelectricity. This case evaluated the stress generated in each layer during cooling in a laminated structure composed of materials with different coefficients of linear expansion, such as TiN, W, Pt, and HZO, using the finite element method. Measurement Method: Computational Science, AI, Data Analysis Product Fields: LSI, Memory, Electronic Components, Manufacturing Equipment, Parts Analysis Objectives: Shape Evaluation, Structural Evaluation, Stress, Strain Evaluation For more details, please download the materials or contact us.